NTMS5838NLR2G

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NTMS5838NLR2G datasheet

• Маркировка
  NTMS5838NLR2G
• Производитель
  ON Semiconductor
• Описание
  ON Semiconductor NTMS5838NLR2G Configuration: Single Continuous Drain Current: 5.8 A Current - Continuous Drain (id) @ 25?° C: 5.8A Drain To Source Voltage (vdss): 40V Drain-source Breakdown Voltage: 40 V Fall Time: 4 ns Fet Feature: Logic Level Gate Fet Type: MOSFET N-Channel, Metal Oxide Forward Transconductance Gfs (max / Min): 4 S Gate Charge (qg) @ Vgs: 17nC @ 10V Gate Charge Qg: 17 nC Gate-source Breakdown Voltage: 20 V Input Capacitance (ciss) @ Vds: 785pF @ 20V Maximum Operating Temperature: + 85 C Mounting Style: SMD/SMT Mounting Type: * Package / Case: * Power - Max: 1.5W Power Dissipation: 1.5 W Rds On (max) @ Id, Vgs: 25 mOhm @ 7A, 10V Resistance Drain-source Rds (on): 20.5 mOhms Rise Time: 23 ns Series: - Transistor Polarity: N-Channel Vgs(th) (max) @ Id: 3V @ 250?µA
• Количество страниц
  6 шт.
• Форматы файла
  HTML, PDF

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